发明名称 GALLIUM NITRIDE SUBSTRATE, AND GALLIUM-NITRIDE-SUBSTRATE TESTING AND MANUFACTURING METHODS
摘要 Fracture-resistant gallium nitride substrate, and methods of testing for and manufacturing such substrates are made available. A gallium nitride substrate (10) is provided with a front side (12) polished to a mirrorlike finish, a back side (14) on the substrate side that is the opposite of the front side (12). A damaged layer (16) whose thickness d is 30 µ m or less is formed on the back side (14). Given that the strength of the front side (12) is I 1 and the strength of the back side (14) is I 2 , then the ratio I 2 / I 1 is 0.46 or more.
申请公布号 HK1107611(A1) 申请公布日期 2010.04.23
申请号 HK20070113126 申请日期 2007.11.30
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 HACHIGO, AKIHIRO
分类号 H01L;H01L21/66 主分类号 H01L
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