发明名称 |
Copper Anode or Phosphorous-Containing Copper Anode, Method of Electroplating Copper on Semiconductor Wafer, and Semiconductor Wafer with Low Particle Adhesion |
摘要 |
Provided is a copper anode or a phosphorous-containing copper anode for use in performing electroplating copper on a semiconductor wafer, wherein purity of the copper anode or the phosphorous-containing copper anode excluding phosphorous is 99.99 wt % or higher, and silicon as an impurity is 10 wtppm or less. Additionally provided is an electroplating copper method capable of effectively preventing the adhesion of particles on a plating object, particularly onto a semiconductor wafer during electroplating copper, a phosphorous-containing copper anode for use in such electroplating copper, and a semiconductor wafer comprising a copper layer with low particle adhesion formed by the foregoing copper electroplating.
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申请公布号 |
US2010096271(A1) |
申请公布日期 |
2010.04.22 |
申请号 |
US20080524623 |
申请日期 |
2008.10.06 |
申请人 |
NIPPON MINING & METALS CO., LTD. |
发明人 |
AIBA AKIHIRO;TAKAHASHI HIROFUMI |
分类号 |
B32B15/04;C25D7/12;C25D17/10 |
主分类号 |
B32B15/04 |
代理机构 |
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代理人 |
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地址 |
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