MULTI-PASS PROGRAMMING FOR MEMORY USING WORD LINE COUPLING

摘要

A multiple pass programming scheme is optimized using capacitive coupling in the word line to word line direction during program-verify operations. A different pass voltage is used in different programming passes on an adjacent word line of a selected word line which is being verified. In particular, a lower pass voltage can be used in a first pass than in a second pass. The programming process may involve a word line look ahead or zigzag sequence in which WLn is programmed in a first pass, followed by WLn+ 1 in a first pass, followed by WLn in a second pass, followed by WLn+1 in a second pass. An initial programming pass may be performed before the first pass in which storage elements are programmed to an intermediate state and/or to a highest state.