发明名称 |
NON-VOLATILE MEMORY HAVING SILICON NITRIDE CHARGE TRAP LAYER |
摘要 |
A flash memory device and methods of forming a flash memory device are provided. The flash memory device includes a doped silicon nitride layer having a dopant comprising carbon, boron or oxygen. The doped silicon nitride layer generates a higher number and higher concentration of nitrogen and silicon dangling bonds in the layer and provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.
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申请公布号 |
US2010096687(A1) |
申请公布日期 |
2010.04.22 |
申请号 |
US20080255617 |
申请日期 |
2008.10.21 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
BALSEANU MIHAELA;ZUBKOV VLADIMIR;XIA LI-QUN;NOORI ATIF;ARGHAVANI REZA;WITTY DEREK R.;AL-BAYATI AMIR |
分类号 |
H01L29/78;H01L21/31;H01L21/3205 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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