发明名称 POSITIVE TYPE RESIST COMPOSITION, HIGH MOLECULAR COMPOUND AND RESIST PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive type resist composition capable of showing an excellent lithography characteristic and forming a resist pattern of a favorable shape, a resist pattern forming method, using the positive type resist composition, and a new high molecular compound useful as a base material component of the positive type resist composition. <P>SOLUTION: The positive type resist composition includes a base material component (A) increased in solubility to an alkali liquid developer by the action of an acid and an acid generating agent component (B) caused to generate the acid by exposure. The base material component (A) contains a high molecular compound (A1) having a structural unit (a0) having a norbornane lactone structure at a side chain and a structural unit (a2) not corresponding to the structural unit (a0) and derived from acrylic ester containing a lactone-contained cyclic group. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010091858(A) 申请公布日期 2010.04.22
申请号 JP20080262795 申请日期 2008.10.09
申请人 TOKYO OHKA KOGYO CO LTD 发明人 DAZAI NAOHIRO;HIRANO TOMOYUKI;SHIONO HIROHISA;MATSUMIYA YU
分类号 G03F7/039;C08F220/28;G03F7/004;H01L21/027 主分类号 G03F7/039
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