发明名称 LATCH STRUCTURE AND BIT LINE SENSE AMPLIFIER STRUCTURE INCLUDING THE SAME
摘要 A latch structure includes a first inverter that includes a first PMOS transistor and a first NMOS transistor, and a second inverter that includes a second PMOS transistor and a second NMOS transistor, receives an output signal of the first inverter, and outputs an input signal to the first inverter. The sources of the first and second transistors of the same type are connected to a common straight source line.
申请公布号 US2010097873(A1) 申请公布日期 2010.04.22
申请号 US20090644979 申请日期 2009.12.22
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE KANG SEOL;LEE EUN SOUK
分类号 G11C7/00 主分类号 G11C7/00
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