| 摘要 |
An object of the present invention is to increase the speed of the level shifting operation in a display device having a level shift circuit formed of polysilicon thin film transistors. The present invention provides a display device having a level shift circuit wherein the above described level shift circuit has: a thin film transistor having a semiconductor layer formed of a polysilicon layer; a load resistance element connected between a second electrode of the above described thin film transistor and a reference power supply; and a waveform rectifying circuit connected to the second electrode of the above described thin film transistor, and a diode element of which the anode region is connected to the first electrode of the above described thin film transistor and of which the cathode region is connected to the second electrode of the above described thin film transistor.
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