| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a crack in a soldered portion of a power semiconductor module even when a temperature cycle is exerted to the power semiconductor module, and also to prevent growth of the crack even if the crack is generated. <P>SOLUTION: The power semiconductor module includes: an insulating substrate 2 including an insulating board 13 and a wiring layer 12 provided on the main surface of the insulating board; a semiconductor device fixed on the wiring layer; and an internal electrode 9 which has a joint surface substantially parallel to the main surface of the insulating board and whose joint surface is bonded to the wiring layer with the solder layer 10. The internal electrode has a plurality of striped upper projections 21 arranged in approximately parallel on the joint surface covered with the solder layer and the wiring layer has a plurality of striped lower projections arranged in approximately parallel in the region covered with the solder layer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
