| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a magneto-resistance effect element and magnetic memory which reduces current required for spin transfer writing. Ž<P>SOLUTION: The magneto-resistance effect element includes a first fixed magnetization layer 4 with a fixed magnetization direction; a free magnetization layer 6 with a variable magnetization direction; a tunnel barrier layer 5 formed between the first fixed magnetization layer and a free magnetization layer; a second fixed magnetization layer 8 which is formed on the tunnel barrier layer opposite to the free magnetization layer and has its magnetization fixed; and a non-magnetic layer 7 formed between the free magnetization layer and the second fixed magnetization layer. Passing current between the first fixed magnetization layer and the second fixed magnetization layer provides the free magnetization layer with a variable magnetization direction. If the second fixed magnetization layer contains Co, a metal containing at least one element selected from Mn, V, and Rh is used for the non-magnetic layer. If the second fixed magnetization layer contains Fe, a metal containing at least one element selected from Ir and Rh is used for the non-magnetic layer. If the second fixed magnetization layer contains Ni, a metal containing Mn is used for the non-magnetic layer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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