| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element structured to suppress the deterioration of yield or the deterioration of laser characteristics because of the difference in level generated in cleavage. Ž<P>SOLUTION: A semiconductor light emitting element 10 includes: a lower electrode layer 11; a semiconductor substrate 12; a lower clad layer 13; an active layer 16; a cap layer 17; a level difference confinement layer 19; current constriction structures 21A and 21B; and an upper electrode layer 23. The level difference confinement layer 19 has a compression distortion value which is greater than or equal to 1% more with respect to the semiconductor substrate 12. A cap layer 17 is provided with a wider band gap than that of the active layer 16, and the band gap of the level difference confinement layer 19 is set so as to be wider than the band gap of the active layer 16, and narrower than the band gap of the cap layer 17. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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