| 摘要 |
PROBLEM TO BE SOLVED: To provide a processing method of a wafer in which no degradation in yield occurs when cutting a semiconductor wafer from a front surface side to split it into devices, wherein the semiconductor wafer has been ground only on the rear surface corresponding to a device region while an annular reinforcing part has been formed on the rear surface corresponding to an outer peripheral marginal region surrounding the device region. SOLUTION: The wafer includes on its surface a device region where a device is formed in a section partitioned by a plurality of cutting planned lines formed in lattice and an outer peripheral marginal region which surrounds the device region. A circular recess is formed on a rear surface corresponding to the device region, and an annular reinforcing part including the marginal region is formed on the outer peripheral side of the circular recess. A processing method for the wafer includes an adhesive tape pasting step for pasting an adhesive tape on the rear surface of the wafer, a cutting groove formation step for forming a cutting groove along the cutting planned line from the front surface side of the wafer to which the adhesive tape is pasted, and an expand step which, after the cutting groove formation step, expands the adhesive tape under the condition that the front surface of the wafer faces down. COPYRIGHT: (C)2010,JPO&INPIT |
