| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element having a structure capable of suppressing relaxation oscillation. Ž<P>SOLUTION: The semiconductor light emitting element has a laminate structure including n-type semiconductor layers 102 and 103, p-type semiconductor layers 110 and 111, and an active layer 105 interposed between those n-type semiconductor layers 102 and 103 and p-type semiconductor layers 110 and 111. The active layer 105 includes a function layer such that a carrier diffusion length in a direction perpendicular to the laminate direction is larger than a carrier diffusion length in the laminate direction. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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