| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment apparatus of substrates capable of uniformly heat-treating substrates, such as semiconductor wafers. SOLUTION: The heat treatment apparatus includes a load space 3 at a lower portion of a heat treatment furnace 2. A nozzle 63 is disposed directly below a boat 4 axisymmetrically to an axis L1 of the semiconductor wafer W, and a process gas supplied from a gas supply pipe 61 is axisymmetrically supplied to the semiconductor wafer W. COPYRIGHT: (C)2010,JPO&INPIT |
