| 摘要 |
In a method of manufacturing a non-volatile memory cell, a self-aligned metal silicide is used in place of a conventional tungsten metal layer to form a polysilicon gate, and the self-aligned metal silicide is used as a connection layer on the polysilicon gate. By using the self-aligned metal silicide to form the polysilicon gate, the use of masks in the etching process may be saved to thereby enable simplified manufacturing process and accordingly, reduced manufacturing cost. Meanwhile, the problem of resistance shift caused by an oxidized tungsten metal layer can be avoided.
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