发明名称 SEMICONDUCTOR ELECTRODE FOR PHOTOELECTRIC DEVICE, ITS CONSTRUCTION METHOD, AND DYE-SENSITIZED SOLAR CELL
摘要 <P>PROBLEM TO BE SOLVED: To provide an oxide semiconductor electrode for photoelectric conversion, which has enough adhesive strength between an oxide semiconductor layer and the conductive substrate, and can adhere to the oxide semiconductor layer with high peeling resistance even if a resin material which has a low heat resistance is used as the substrate. <P>SOLUTION: The oxide semiconductor electrode for photoelectric conversion has the substrate having the conductive surface and the oxide semiconductor layer formed on its conductive surface, and is formed with a curing resin scattered between the conductive surface and the oxide conductive layer. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010092813(A) 申请公布日期 2010.04.22
申请号 JP20080264339 申请日期 2008.10.10
申请人 SHIMANE PREFECTURE 发明人 NODA SHUJI;TOJIMA KUNIAKI;NAGANO KAZUHIDE;NAKAJIMA TAKESHI;KANAYAMA MASAHIRO
分类号 H01M14/00;H01L31/04 主分类号 H01M14/00
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