| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent degradation in reliability of wiring near a metal pad even if cracks occur in an interlayer insulating film positioned below the metal pad and water enters the cracks. <P>SOLUTION: A semiconductor device is provided with: the interlayer insulating film 18 formed on a semiconductor substrate 10; metal wiring 20A for rings provided through the interlayer insulating film 18; metal wiring 20B for contact provided through the interlayer insulating film 18; a first protection insulating film 21 formed on the entire upper surface of the interlayer insulating film 18 and the metal wiring 20A for rings; and a metal pad 23 formed on the first protection insulating film 21. The metal wiring 20A for rings is provided in a ring shape in a region positioned below the metal pad 23 in the interlayer insulating film 18. The metal pad 23 is connected to the metal wiring 20B for contact through the first opening 21a formed on the first protection insulating film 21. <P>COPYRIGHT: (C)2010,JPO&INPIT |
