THROUGH ELECTRODE SUBSTRATE, METHOD FOR MANUFACTURING THE THROUGH ELECTRODE SUBSTRATE, AND SEMICONDUCTOR DEVICE USING THE THROUGH ELECTRODE SUBSTRATE

摘要

Disclosed is a through electrode substrate comprising a conduction part extended from the obverse surface of the substrate to the reverse surface of the substrate, the conduction part having improved electric characteristics.  Also disclosed is a semiconductor device using the through electrode substrate.  A through electrode substrate (100) comprises a substrate (102) having a through-hole (104) extended from the obverse surface of the substrate to the reverse surface of the substrate, and a conduction part (106) comprising a metal material filled into the through-hole (104).  The conduction part (106) comprises at least a metal material having an area weighed average grain diameter of not less than 13 µm.  Further, the conduction part (106) comprises a metal material having a grain diameter of not less than 29 µm.  One end of the conduction part comprises a metal material having an area weighed average grain diameter of less than 13 µm, and the other end of the conduction part comprises at least a metal material having an area weighed average grain diameter of not less than 13µm.