| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor memory device is provided to improve the electrical property of the device by uniformly forming the height of the effective field oxide layer of an element isolation layer. CONSTITUTION: A tunnel insulation layer(101), a conductive layer for a floating gate(102), a dielectric layer(103) are formed on a semiconductor substrate(100). The semiconductor substrate includes a selection transistor region and a memory cell region. The dielectric layer in the selection transistor region and the dielectric layer in a space between the gates of the memory cell region are etched. A conductive layer for a control gate(105) and a metal gate layer(106) are formed. The conductive layer for the control gate, the dielectric layer and the conductive layer for the floating gate are etched in order to form a selection transistor gate pattern and a memory cell gate pattern.</p> |
