| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which suppresses malfunction caused by read disturb. <P>SOLUTION: The nonvolatile semiconductor memory device includes: a memory cell array 13 which includes a plurality of NAND cell units to which a plurality of NAND type flash memory cells are connected in series, and a selection transistor is connected to both ends, and in which data is read from the NAND type flash memory cell by page; and a data buffer 12 which holds at least one page of data stored in a page 14 which is relatively high in read frequency in the memory cell array 13, and outputs data currently held instead of access to the memory cell array 13, when a request is made to read the page 14 which is relatively high in read frequency. <P>COPYRIGHT: (C)2010,JPO&INPIT |
