| 摘要 |
PROBLEM TO BE SOLVED: To make more efficient a manufacturing process of a semiconductor integrated circuit device, containing a plurality of MTJ memory cell arrays in the same chip. SOLUTION: A system LSI 100 is provided with a plurality of MRAM circuit blocks 110a-110f. The MRAM circuit blocks 110a-110f includes MTJ memory cell arrays 10a-10f, respectively, wherein MTJ memory cells are arranged in a matrix. On each of the MTJ memory cell arrays 10a-10f, a bit line BL for flowing two-way data writing current corresponding to writing data is arranged. Extending directions of the bit lines BL in each of the MTJ memory cell arrays 10a-10f are the same direction on the system LSI 100. COPYRIGHT: (C)2010,JPO&INPIT
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