| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of removing a polysilicon film for reliably etching/removing the polysilicon film at an end of a substrate in desired width without a complicated process. Ž<P>SOLUTION: The method of removing the polysilicon film for removing the polysilicon film at the substrate end of the substrate where the polysilicon film is formed by wet etching is provided with a step of etching/removing a natural oxide film formed in a part corresponding to the substrate end which is to be removed in the polysilicon film and exposing the polysilicon film and a step of forming a paddle of mixed liquid of hydrofluoric acid and nitric acid as an etchant in a part of the substrate end to which the polysilicon film is exposed and etching/removing the polysilicon film of a part by the paddle while the substrate is rotated by a rotational frequency of a degree with which the paddle is maintained. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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