SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device including a thin film transistor with excellent electrical characteristics and high reliability, and to provide a method for manufacturing the semiconductor device with high mass productivity.

SOLUTION: The gist includes: to form a low-resistance oxide semiconductor layer as a source or drain region after forming a drain or source electrode layer over a gate insulating layer; and then to form an oxide semiconductor film thereover as a semiconductor layer. It is preferable that an oxygen-excess oxide semiconductor layer is used as a semiconductor layer and an oxygen-deficient oxide semiconductor layer is used as a source region and a drain region.

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