| 摘要 |
<p>The power semiconductor module (100) comprises a component (1) of the power electronics on a substrate (9). The component is embedded into a powder ballast (4') in the side without the substrate. The powder ballast is formed from a powder material, which comprises a specific electrical resistance greater than 103 centimeter. The powder ballast is made of a powder material, which is selected from boron nitride, silicon nitride, aluminum nitride, silicon aluminum oxynitride, silicon carbide, zinc oxide, aluminum oxide, magnesium oxide, steatite and forsterite. An independent claim is included for a method for manufacturing a power semiconductor module.</p> |
