SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

The semiconductor device manufacturing method comprises a step to form a GaN-based semiconductor layer on a substrate, a step (S20) to perform heat treatment in an ALD device at a higher temperature than the temperature for gate insulation film growth to remove fluorine on the surface of the GaN-based semiconductor layer, a step (S16) to form the gate insulation film, that is aluminum oxide, on the surface of the GaN-based semiconductor layer inside the ALD device after step (S20) to remove the fluorine, and a step to form a gate electrode on the gate insulation film. The fluorine concentration in the gate insulation film at the interface with the GaN-based semiconductor layer after the formation of the gate insulation film is no more than 1 × 1019/cm3.