发明名称 PROCESS FOR PRODUCING MAGNETORESISTANCE EFFECT ELEMENT AND PROGRAM FOR PRODUCING MAGNETORESISTANCE EFFECT ELEMENT
摘要 <p>This invention provides a process for producing a magnetoresistance effect element having a high MR ratio. The production process comprises forming a first ferromagnetic layer constituting a first ferromagnetic body layer, forming a barrier layer constituting a tunnel barrier layer formed of a metal oxide on the first ferromagnetic body layer, and forming a second ferromagnetic layer constituting a second ferromagnetic body layer on the tunnel barrier layer. The formation of the barrier layer is characterized in that a metal film is formed and the metal film is then naturally oxidized under heating conditions. The natural oxidation is a treatment in which a treatment object is exposed to an oxygen gas or an oxygen gas-containing gas (for example, a mixture composed of an inert gas and an oxygen gas). In this natural oxidation, oxidation is carried out without subjecting the oxygen gas to plasmatization or the like.</p>
申请公布号 WO2010044134(A1) 申请公布日期 2010.04.22
申请号 WO2008JP68556 申请日期 2008.10.14
申请人 CANON ANELVA CORPORATION;CHOI, YOUNG-SUK;OTANI, YUICHI;ERNULT, FRANCK 发明人 CHOI, YOUNG-SUK;OTANI, YUICHI;ERNULT, FRANCK
分类号 H01L43/12;G11B5/39;H01L21/8246;H01L27/105;H01L43/08;H01L43/10 主分类号 H01L43/12
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