发明名称 |
PROCESS FOR PRODUCING MAGNETORESISTANCE EFFECT ELEMENT AND PROGRAM FOR PRODUCING MAGNETORESISTANCE EFFECT ELEMENT |
摘要 |
<p>This invention provides a process for producing a magnetoresistance effect element having a high MR ratio. The production process comprises forming a first ferromagnetic layer constituting a first ferromagnetic body layer, forming a barrier layer constituting a tunnel barrier layer formed of a metal oxide on the first ferromagnetic body layer, and forming a second ferromagnetic layer constituting a second ferromagnetic body layer on the tunnel barrier layer. The formation of the barrier layer is characterized in that a metal film is formed and the metal film is then naturally oxidized under heating conditions. The natural oxidation is a treatment in which a treatment object is exposed to an oxygen gas or an oxygen gas-containing gas (for example, a mixture composed of an inert gas and an oxygen gas). In this natural oxidation, oxidation is carried out without subjecting the oxygen gas to plasmatization or the like.</p> |
申请公布号 |
WO2010044134(A1) |
申请公布日期 |
2010.04.22 |
申请号 |
WO2008JP68556 |
申请日期 |
2008.10.14 |
申请人 |
CANON ANELVA CORPORATION;CHOI, YOUNG-SUK;OTANI, YUICHI;ERNULT, FRANCK |
发明人 |
CHOI, YOUNG-SUK;OTANI, YUICHI;ERNULT, FRANCK |
分类号 |
H01L43/12;G11B5/39;H01L21/8246;H01L27/105;H01L43/08;H01L43/10 |
主分类号 |
H01L43/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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