| 摘要 |
A method of manufacturing a back electrode of a silicon bulk solar cell is provided, which includes depositing a passivation layer on a back of a silicon substrate, and then coating a first metal paste on the passivation layer. Thereafter, a first sintering is performed at a high temperature, such that the first metal paste penetrates the passivation layer, joints to the silicon substrate, and diffuses into the back of the silicon substrate. Afterward, a second metal paste is coated on the back of the silicon substrate, and then a second sintering is performed at a low temperature to cure the second metal paste without penetrating the passivation layer, so as to finish the back electrode structure. Therefore, this method can reduce the manufacturing cost and simplify the manufacturing process.
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