发明名称 ELECTRON BEAM DEVICE, ITS CORRECTION METHOD, AND SUBSTRATE FOR CORRECTION
摘要 PROBLEM TO BE SOLVED: To enable an electron beam device to carry out high-accuracy observation and analysis and to easily and accurately carrying out aberration correction with higher accuracy, in carrying out the aberration correction with the use of a standard sample with particles deposited on a substrate. SOLUTION: In carrying out aberration correction of a STEM device, a standard substrate with Au particles 102 deposited on a single-crystal substrate 101 made of Si is used, and based on electron diffraction images and a Kikuchi pattern, inclination of the standard substrate is adjusted. In that state, the electron beams are focused, shapes of the Au particles 102 are calculated, and differences from circular proximity of the Au particles 102 are analyzed, and, based on the analysis result, the aberration correction is carried out. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010092625(A) 申请公布日期 2010.04.22
申请号 JP20080258920 申请日期 2008.10.03
申请人 FUJITSU LTD 发明人 ODAKA YASUTOSHI
分类号 H01J37/153;H01J37/26 主分类号 H01J37/153
代理机构 代理人
主权项
地址