| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus and method for manufacturing a silicon carbide single crystal, wherein the utilization rate of a raw material for sublimation is improved. Ž<P>SOLUTION: In the apparatus 1 for manufacturing the silicon carbide single crystal, an induction heating coil 30 is set to be longer than the length in the vertical direction of a graphite crucible 10 in the cross-sectional view in the vertical direction of the graphite crucible 10, and the bottom part 52 of a reaction vessel body 50 is arranged in the vicinity of the central part of the induction heating coil 30 so that the temperature region Stmax1 in the temperature distribution naturally formed by the induction heating coil 30 is made to correspond to the bottom part 52 of the reaction vessel body 50, and the temperature region Stmax1 in the graphite crucible 10 is extended from the inside toward the outside of the graphite crucible 10 as the raw material 80 for sublimation sublimates. Thereby, as the temperature lowering of the raw material 80 for sublimation caused by the deposition of silicon carbide polycrystal at the bottom part of the raw material 80 for sublimation can be prevented, sublimation of the raw material proceeds without being disturbed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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