| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device with less unevenness of light emission color and with a steep rise of front part brightness distribution. <P>SOLUTION: There are provided: a plurality of light emitting elements 102 disposed, arranged with a predetermined space on a substrate; a bridge part 105 in a space located between the light emitting elements; and a wavelength conversion layer 103 integrally covering the upper surfaces of the light emitting element and the bridge parts. The film thickness of the wavelength conversion layer inclines at least in its peripheral part region and becomes thinner as it approaches end part. Hereby, light emitted from the wavelength conversion layer laterally and in the direction of the substrate is reduced, ensuring, the effect of rise up of light, so that the rise up of front surface brightness distribution is made steep. By using a wavelength conversion layer that integrally covers the plurality of the light emitting elements, uneven light emission color is reduced. <P>COPYRIGHT: (C)2010,JPO&INPIT |
