| 摘要 |
PURPOSE: A bipolar transistor and a method for manufacturing the same are provided to prevent the parasitic junction between wells by forming a junction region in a conductive layer. CONSTITUTION: An element isolation layer(202a) is formed in the bipolar region of a semiconductor substrate(200). A conductive layer is formed on the upper side of the element isolation layer. A p+ junction region(214) and an n+ junction region(210) are formed in the conductive layer by implanting a dopant. A first silicide layer(216) is formed to expose parts of the upper interface of the p+ and n+ junction regions. A second silicide layer(218) is formed on the exposed p+ and n+ junction regions. An electrode(224) is connected to plugs(222) which are connected to a second silicide layer.
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