| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve the resistance of bit-lines by forming a bit-line with an ion-implantation process before an active pattern is formed. CONSTITUTION: An element isolation layer(102) is formed in a semiconductor substrate(100). A bit-line(BL) is formed on the surface of the semiconductor substrate, on which the element isolation layer is formed. A sacrificial layer is formed on the element isolation layer and the bit-line. The sacrificial layer includes a hole which exposes the bit-line. The exposed bit-line and semiconductor substrate are etched in order to form a trench. The trench is connected to the hole. An active pattern(110) is formed in the hole and the trench. A gate is formed on the sidewall of the active pattern.
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