| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device, which can make a surface level of a buried layer in a pixel area and a peripheral area even and can reduce irregularities of imaging characteristics in a central part and ends of a screen, and to provide a method of manufacturing the same and a camera. Ž<P>SOLUTION: A photodiode is formed for each pixel in an element area A1 of a semiconductor substrate 10. An insulating film 20 is formed on the semiconductor substrate in a pixel area and a peripheral area A2. An optical waveguide recess 20b is formed in the pixel area. An adjustment recess 20a is formed in the insulating film, causing the position of the upper surface of the insulating film in a predetermined area within the peripheral area to recede toward the semiconductor substrate. An optical transparent buried layer 22 is formed in a manner buried in the optical waveguide recess in the pixel area and in the adjustment recess in the peripheral area. Then, a color filter 23 is formed on an upper layer of the buried layer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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