A high electron mobility transistor (HEMT) is disclosed capable of performing as a pressure sensor. In one embodiment, the subject pressure sensor can be used for the detection of body fluid pressure. A piezoelectric, biocompatible film can be used to provide a pressure sensing functionalized gate surface for the HEMT. Embodiments of the disclosed sensor can be integrated with a wireless transmitter for constant pressure monitoring.
申请公布号
WO2010022038(A3)
申请公布日期
2010.04.22
申请号
WO2009US54139
申请日期
2009.08.18
申请人
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.;REN, FAN;PEARTON, STEPHEN, JOHN