发明名称 SIMULATION SITE PLACEMENT FOR LITHOGRAPHIC PROCESS MODELS
摘要 A method and system for performing the method are provided for designing a mask layout that includes selecting simulation sites for optical proximity correction (OPC) or mask verification, prior to fragmentation of shape edges. The primary simulation sites are selected based upon the influence of adjacent shapes, and then fragmentation is performed based on the primary simulation sites. Preferably, the simulation sites are selected by initial simulation within a region of influence of the vertices of mask shapes. The extrema of the resulting simulations are identified, and the intersection of a projection from the extrema to shape edges is used to define the primary simulation sites. Fragmentation of the edges may then be performed as long as the primary simulation sites thus selected are retained. The resulting simulation sites will allow the OPC engine to more effectively correct the shapes where the greatest influences will occur.
申请公布号 EP2113109(A4) 申请公布日期 2010.04.21
申请号 EP20070865915 申请日期 2007.12.20
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 KRASNOPEROVA, AZALIA
分类号 G06F17/50;G03F1/14 主分类号 G06F17/50
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