| 摘要 |
A nonvolatile memory device including one transistor and one resistant material and a method of manufacturing the nonvolatile memory device are provided. The nonvolatile memory device includes a substrate (40), a transistor (42,44,46,48,50) formed on the substrate, and a data storage unit (S) connected to a drain (44) of the transistor. The data storage unit includes a data storage material layer (54) having different resistance characteristics in different voltage ranges, preferably a transition metal oxide such as NiO, V 2 O 5 , ZnO, Nb 2 O 5 , TiO 2 , WO 3 , CoO etc. |
