发明名称 |
DAMASCENE CONTACTS ON III-V CMOS DEVICES |
摘要 |
<p>A method for manufacturing a III-V CMOS device is disclosed. The device includes a first and second main contact and a control contact. In one aspect, the method includes providing the control contact by using damascene processing. The method thus allows obtaining a control contact with a length of between about 20 nm and 5 mum and with good Schottky behavior. Using low-resistive materials such as Cu allows reducing the gate resistance thus improving the high-frequency performance of the III-V CMOS device.</p> |
申请公布号 |
EP2176880(A1) |
申请公布日期 |
2010.04.21 |
申请号 |
EP20070784901 |
申请日期 |
2007.07.20 |
申请人 |
IMEC |
发明人 |
VAN HOVE, MARLEEN;DERLUYN, JOFF |
分类号 |
H01L21/338;H01L21/285;H01L29/778 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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