发明名称 CASCODE CURRENT SENSOR FOR DISCRETE POWER SEMICONDUCTOR DEVICES
摘要 A current sensor to be connected in series with a power semiconductor device between a voltage supply terminal and ground. The current sensor includes a first terminal to be coupled to the power semiconductor device, a second terminal to be coupled to one of the voltage supply terminal and ground, and a current mirror. The current mirror includes a first MOSFET and a second MOSFET each having a source, a drain, and a gate. The source of the first MOSFET is connected to the source of the second MOSFET and to the second terminal, the drain of the first MOSFET is connected to the first terminal, and the gate of the first MOSFET is connected to the gate of the second MOSFET.
申请公布号 EP2176886(A1) 申请公布日期 2010.04.21
申请号 EP20080794842 申请日期 2008.07.29
申请人 ADVANCED ANALOGIC TECHNOLOGIES, INC. 发明人 WILLIAMS, RICHARD, K.
分类号 H01L27/088;G01R1/20;G01R19/00;H01L23/00;H01L23/495;H01L29/10;H01L29/417;H01L29/423;H01L29/78;H02M1/00;H03K17/082 主分类号 H01L27/088
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