| 摘要 |
1,037,199. Transistors. STANDARD TELEPHONES & CABLES Ltd. July 9, 1965 [July 14, 1964], No. 28953/64. Heading H1K. Zinc or cadmium is diffused into a body 1 of N-type gallium arsenide to form a P-type base region 5, and silicon is diffused under arsenic pressure into part of the base region to form an N-type emitter region 8. As shown, the base region 5 is formed by diffusion from a surface layer 4 of silica originally containing zinc oxide or cadmium oxide, this layer being provided by sputtering in an oxidizing atmosphere using a silicon electrode on which zinc or cadmium is placed. A layer 7 of N-type silicon is provided by sputtering in an argon atmosphere and the emitter region 8 is then formed by heating the body together with deoxidized arsenic in a sealed container. Alternatively the arsenic pressure may be obtained by including the arsenic with the silicon layer 7. The silicon layer 7 is oxidized to silica or removed by etching, except where it is masked by a silica layer 9 through which an aperture 11 is then formed to permit the application of an emitter contact.
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