发明名称 |
Multiple level cell phase-change memory devices having controlled resistance drift parameter, memory systems employing such devices and methods of reading memory devices |
摘要 |
In a method of controlling resistance drift in a memory cell of a resistance-changeable material memory device, the resistance changeable material in the memory cell is treated so that a drift parameter for the memory cell is less than about 0.18, wherein a change in resistance of a memory cell over the time period is determined according to the relationship: Rdrift=Rinitial×tα; where Rdrift represents a final resistance of the memory cell following the time period, Rinitial represents the initial resistance of the memory cell following the programming operation, t represents the time period; and α represents the drift parameter.
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申请公布号 |
US7701749(B2) |
申请公布日期 |
2010.04.20 |
申请号 |
US20080079886 |
申请日期 |
2008.03.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEONG CHANG-WOOK;KANG DAE-HWAN;KIM HYEONG-JUN;KO SEUNG-PIL;LIM DONG-WON |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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地址 |
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