| 摘要 |
PURPOSE: A non-volatile memory device and a bit line pre-charge method thereof are provided to increase a bitline voltage to a high level in a short time by applying high voltage to a bit line selection part during the initial period of a bitline precharge operation. CONSTITUTION: A bit line selection part(330) selectively connects a bit line to a sensor node. A switching element(N390) transfers a first control signal of the first voltage level with the second control signal of a first logic level to the bit line selection part. A pull-up element supplies a fifth voltage which is more than a first voltage to the bitline selection part by the second control signal of a second logic level. The switching element and the pull-up element(P390) have different turn-on time according to the level of the second control signal. |
