| 摘要 |
A method of manufacturing a semiconductor. A first epitaxial layer is formed on a gate nitride layer, and a protection nitride layer is formed on the first epitaxial and gate nitride layers. A first gate insulation layer is formed on a drain silicide, a gate oxide layer is formed on a portion of the first epitaxial layer exposed by a trench. A second epitaxial layer is formed on the first layer. Polysilicon fills the trench to form a gate electrode. Ion-implanting impurities on the second epitaxial layer forms a source region. A second gate insulation layer is formed on the gate electrode and the gate oxide layer, a source silicide is formed on the second gate insulation layer, and an interlayer insulation layer is formed on the second epitaxial layer, source region and source silicide. Source, gate and drain contact holes expose the source silicide, gate electrode and drain silicide.
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