发明名称 Hafnium titanium oxide films
摘要 Embodiments of a dielectric layer containing a hafnium titanium oxide film structured as one or more monolayers include the dielectric layer disposed in an integrated circuit. Embodiments of methods of fabricating such a dielectric layer provide a dielectric layer for use in a variety of electronic devices.
申请公布号 US7700989(B2) 申请公布日期 2010.04.20
申请号 US20060565826 申请日期 2006.12.01
申请人 MICRON TECHNOLOGY, INC. 发明人 AHN KIE Y.;FORBES LEONARD
分类号 H01L27/108 主分类号 H01L27/108
代理机构 代理人
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