METHOD FOR ETCHING A LAYER OF A SILICON SEMICONDUCTOR SUBSTRATE

摘要

The invention relates to a method for selectively etching a Si-Ge mixed semiconductor layer of a silicon semiconductor substrate by dry chemical etching of the Si-Ge mixed semiconductor layer, by means of an etching gas selected from the group comprising ClFand/or ClF, wherein the etching gas is alkalized with a gas from the group Cland/or HCl.