METHOD FOR FORMING COBALT SILICIDE

摘要

PURPOSE: A method for forming cobalt silicide is provided to improve the roughness of the cobalt silicide by forming a titanium cover layer which reacts oxygen instead of the cobalt silicide. CONSTITUTION: A nitride oxide layer(200) is formed on a monocrystalline silicon substrate(100). A cobalt layer(300) is formed by depositing cobalt on the nitride oxide layer. Titanium is deposited on the cobalt layer in order to form a titanium cover layer(400). The thickness of the cobalt layer is between 1 to 20nm. A thermal process is performed in order to form cobalt silicide(500).