| 摘要 |
Exemplary embodiments provide a semiconductor fabrication method including a combination of monolithic integration techniques with wafer bonding techniques. The resulting semiconductor devices can be used in a wide variety of opto-electronic and/or electronic applications such as lasers, light emitting diodes (LEDs), phototvoltaics, photodetectors and transistors. In an exemplary embodiment, the semiconductor device can be formed by first forming an active-device structure including an active-device section disposed on a thinned III-V substrate. The active-device section can include OP and/or EP VCSEL devices. A high-quality monolithic integration structure can then be formed with low defect density through an interfacial misfit dislocation. In the high-quality monolithic integration structure, a thinned III-V mating layer can be formed over a silicon substrate. The thinned III-V substrate of the active-device structure can subsequently be wafer-bonded onto the thinned III-V mating layer of the high-quality monolithic integration structure forming an optoelectronic semiconductor device on silicon.
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