发明名称 METHODS OF FORMING THROUGH-WAFER INTERCONNECTS AND STRUCTURES RESULTING THEREFROM
摘要 Semiconductor devices including through-wafer interconnects are disclosed. According to an embodiment of the present invention, a semiconductor device may comprise a substrate having a first surface and a second, opposing surface, and a through-wafer interconnect extending into the first surface of the substrate. The through-wafer interconnect may include an electrically conductive material extending from the first surface of the substrate to the second, opposing surface of the substrate. The through-wafer interconnect may also include a first dielectric material disposed between the electrically conductive material and the substrate and extending from the second, opposing surface of the substrate to the first portion of the conductive material. Additionally, the through-wafer interconnect may include a second dielectric material disposed over a portion of the electrically conductive material and exhibiting a surface that defines a blind aperture extending from the first surface toward the second, opposing surface.
申请公布号 KR100954003(B1) 申请公布日期 2010.04.20
申请号 KR20087003458 申请日期 2006.08.02
申请人 发明人
分类号 H01L23/48;H01L21/768 主分类号 H01L23/48
代理机构 代理人
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