发明名称 |
Phase change device having two or more substantial amorphous regions in high resistance state |
摘要 |
Memory devices are described herein along with method for operating the memory device. A memory cell as described herein includes a first electrode and a second electrode. The memory cell also comprises phase change material having first and second active regions arranged in series along an inter-electrode current path between the first and second electrode.
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申请公布号 |
US7701750(B2) |
申请公布日期 |
2010.04.20 |
申请号 |
US20080117164 |
申请日期 |
2008.05.08 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
SHIH YEN-HAO;CHEN CHIEH FANG;LUNG HSIANG-LAN |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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