| 摘要 |
FIELD: electrical engineering. ^ SUBSTANCE: invention relates to devices that can be used as spin (quantum) memory elements and logical data systems, as well as a source of spin-polarised (by laser) radiation in mm and submillimetre ranges. Proposed spin transistor comprises emitter made from ferromagnetic material, base made from oxide compound and detector made from monocrystal wide-band gap semiconductor. Emitter is made from thin-film composited material (EuO)Fe with EuO:Fe ratio making (46):1. Field transistor emitter built around ferromagnetic semiconductor composite material (EuO)Fe in contact with wide-band gap nonmagnetic semiconductor GaAs (InSb, GaN) allows producing ambient-temperature spin transistor with operating characteristics controlled by external magnetic field. ^ EFFECT: notable spin polarisation. ^ 4 dwg |
