| 摘要 |
PURPOSE: A semiconductor memory device is provided to prevent error set from being generated after the reset operation of a memory cell by uniformly maintaining a voltage which is applied during the reset operation. CONSTITUTION: In a memory cell array, a memory cell is arranged in the intersection between a plurality of first wirings and a plurality of second wirings. A control circuit applies a first voltage to a first wiring and applies a second voltage to a second wiring in order to apply a first electric potential to a selected memory cell. A control circuit comprises a signal output circuit and a current sustain circuit. A signal output circuit(SOUT) outputs a first signal based on a current and a reference current flowing in a memory cell through the first wiring and the second wiring. The current sustain circuit(IMEM) maintains a second current flowing in the first wiring or the wiring electrically connected with the first wiring during a predetermined period.
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