发明名称 |
Method and apparatus for programming nonvolatile memory |
摘要 |
A nonvolatile memory has logic which performs a programming operation, that controls a series of programming bias arrangements to program at least a selected memory cell of the memory array with data. The series of programming bias arrangements include multiple sets of changing gate voltage values to the memory cells.
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申请公布号 |
US7701769(B2) |
申请公布日期 |
2010.04.20 |
申请号 |
US20080188499 |
申请日期 |
2008.08.08 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUE HANG-TING;HSU TZU HSUAN |
分类号 |
G11C11/34;G11C16/04 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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