发明名称 Method and apparatus for programming nonvolatile memory
摘要 A nonvolatile memory has logic which performs a programming operation, that controls a series of programming bias arrangements to program at least a selected memory cell of the memory array with data. The series of programming bias arrangements include multiple sets of changing gate voltage values to the memory cells.
申请公布号 US7701769(B2) 申请公布日期 2010.04.20
申请号 US20080188499 申请日期 2008.08.08
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 LUE HANG-TING;HSU TZU HSUAN
分类号 G11C11/34;G11C16/04 主分类号 G11C11/34
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